Engineering & Materials Science
Sapphire
100%
Metallorganic chemical vapor deposition
64%
High electron mobility transistors
64%
Substrates
56%
Heterojunctions
34%
Semiconductor quantum wells
30%
Light emitting diodes
26%
Metallorganic vapor phase epitaxy
25%
Two dimensional electron gas
25%
Transconductance
24%
Full width at half maximum
21%
Distributed Bragg reflectors
19%
Epilayers
18%
Hall mobility
18%
Metals
17%
Photoluminescence
16%
Carrier concentration
15%
MESFET devices
14%
Current density
13%
Organic chemicals
11%
Gates (transistor)
11%
Annealing
10%
Diodes
10%
Temperature
10%
Drain current
9%
Dark currents
9%
Chemical vapor deposition
9%
Growth temperature
8%
Rapid thermal annealing
8%
Electron mobility
8%
Electron beams
8%
Chemical beam epitaxy
7%
Leakage currents
7%
Photodiodes
7%
Atomic force microscopy
7%
Photodetectors
7%
Electrodes
7%
Quantum efficiency
7%
Epitaxial films
6%
Characterization (materials science)
6%
Optoelectronic devices
6%
Semiconductor materials
6%
Crystals
6%
Etching
6%
Electric potential
6%
Sheet resistance
6%
Wavelength
5%
X rays
5%
Atmospheric pressure
5%
Gallium nitride
5%
Physics & Astronomy
sapphire
78%
high electron mobility transistors
54%
metalorganic chemical vapor deposition
52%
light emitting diodes
29%
quantum wells
23%
transconductance
18%
templates
17%
vapor phase epitaxy
14%
Bragg reflectors
12%
Schottky diodes
12%
photoluminescence
10%
characterization
10%
electron gas
9%
field effect transistors
9%
wafers
8%
electron mobility
8%
electric potential
8%
ellipsometry
7%
metals
7%
current density
7%
leakage
7%
electron beams
6%
insertion
6%
etching
6%
annealing
6%
atomic force microscopy
6%
room temperature
5%
passivity
5%
x rays
5%
optical properties
5%
caps
5%
photometers
5%
output
5%
electric contacts
5%
Chemical Compounds
Transconductance
19%
Metallorganic Chemical Vapour Deposition
17%
Chemical Vapour Deposition
14%
Electron Mobility
13%
Compound Mobility
10%
Leakage Current
9%
Drain Current
7%
Voltage
7%
Current Density
7%
Field Effect
7%
Liquid Film
7%
Alloy
6%
Annealing
6%
Schottky Contact
6%
Electron Beam Induced Current
5%
Sheet Resistance
5%