A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
|Number of pages
|IEICE Transactions on Electronics
|Published - 1995 Sept 1
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering