0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Masami Tokumitsu; Makoto Hirano; Koichi Murata; Yuhki Imai; Kimiyoshi Yamasaki

0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Masami Tokumitsu, Makoto Hirano, Koichi Murata, Yuhki Imai, Kimiyoshi Yamasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Publisher	Publ by IEEE
Pages	1629-1632
Number of pages	4
ISBN (Print)	0780317793
Publication status	Published - 1994 Jan 1
Event	Proceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA Duration: 1994 May 23 → 1994 May 27

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	3
ISSN (Print)	0149-645X

Other

Other	Proceedings of the IEEE MTT-S International Microwave Symposium
City	San Diego, CA, USA
Period	94/5/23 → 94/5/27

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. / Tokumitsu, Masami; Hirano, Makoto; Murata, Koichi et al.
IEEE MTT-S International Microwave Symposium Digest. Publ by IEEE, 1994. p. 1629-1632 (IEEE MTT-S International Microwave Symposium Digest; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tokumitsu, M, Hirano, M, Murata, K, Imai, Y & Yamasaki, K 1994, 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. in IEEE MTT-S International Microwave Symposium Digest. IEEE MTT-S International Microwave Symposium Digest, vol. 3, Publ by IEEE, pp. 1629-1632, Proceedings of the IEEE MTT-S International Microwave Symposium, San Diego, CA, USA, 94/5/23.

@inproceedings{ff7298d10eee4e77be0bbe24de0c31f0,

title = "0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs",

abstract = "A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.",

author = "Masami Tokumitsu and Makoto Hirano and Koichi Murata and Yuhki Imai and Kimiyoshi Yamasaki",

year = "1994",

month = jan,

day = "1",

language = "English",

isbn = "0780317793",

series = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Publ by IEEE",

pages = "1629--1632",

booktitle = "IEEE MTT-S International Microwave Symposium Digest",

note = "Proceedings of the IEEE MTT-S International Microwave Symposium ; Conference date: 23-05-1994 Through 27-05-1994",

}

TY - GEN

T1 - 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

AU - Tokumitsu, Masami

AU - Hirano, Makoto

AU - Murata, Koichi

AU - Imai, Yuhki

AU - Yamasaki, Kimiyoshi

PY - 1994/1/1

Y1 - 1994/1/1

N2 - A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

AB - A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

UR - http://www.scopus.com/inward/record.url?scp=0028017089&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028017089&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028017089

SN - 0780317793

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 1629

EP - 1632

BT - IEEE MTT-S International Microwave Symposium Digest

PB - Publ by IEEE

T2 - Proceedings of the IEEE MTT-S International Microwave Symposium

Y2 - 23 May 1994 through 27 May 1994

ER -

0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Abstract

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