-1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits

Masahiro Sasaki; Makoto Ikeda; Kunihiro Asada

doi:10.1109/ICMTS.2006.1614264

-1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits

Masahiro Sasaki, Makoto Ikeda, Kunihiro Asada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

This paper proposes quite accurate four-transistor temperature sensor designed and developed for thermal testing and monitoring of VLSI circuits. The sensor is featured with an extremely small area of 11.6×4.1 μm ² and low power consumption of about 25 μW. The performance of the sensor is highly linear and the predicted temperature error is merely -1.0-+0.8°C using two-point calibration within the range of 50 - 125°C. The sensor is implemented in ASPLA CMOS 90nm 1P6M process, operated at supply voltage of IV, and tested successfully.

Original language	English
Title of host publication	2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers
Pages	9-12
Number of pages	4
DOIs	https://doi.org/10.1109/ICMTS.2006.1614264
Publication status	Published - 2006 Oct 13
Externally published	Yes
Event	2006 International Conference on Microelectronic Test Structures - Austin, TX, United States Duration: 2006 Mar 6 → 2006 Mar 9

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2006

Conference

Conference	2006 International Conference on Microelectronic Test Structures
Country/Territory	United States
City	Austin, TX
Period	06/3/6 → 06/3/9

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICMTS.2006.1614264

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Sasaki, M., Ikeda, M., & Asada, K. (2006). -1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits. In 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers (pp. 9-12). [1614264] (IEEE International Conference on Microelectronic Test Structures; Vol. 2006). https://doi.org/10.1109/ICMTS.2006.1614264

-1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits. / Sasaki, Masahiro; Ikeda, Makoto; Asada, Kunihiro.

2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers. 2006. p. 9-12 1614264 (IEEE International Conference on Microelectronic Test Structures; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sasaki, M, Ikeda, M & Asada, K 2006, -1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits. in 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers., 1614264, IEEE International Conference on Microelectronic Test Structures, vol. 2006, pp. 9-12, 2006 International Conference on Microelectronic Test Structures, Austin, TX, United States, 06/3/6. https://doi.org/10.1109/ICMTS.2006.1614264

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abstract = "This paper proposes quite accurate four-transistor temperature sensor designed and developed for thermal testing and monitoring of VLSI circuits. The sensor is featured with an extremely small area of 11.6×4.1 μm 2 and low power consumption of about 25 μW. The performance of the sensor is highly linear and the predicted temperature error is merely -1.0-+0.8°C using two-point calibration within the range of 50 - 125°C. The sensor is implemented in ASPLA CMOS 90nm 1P6M process, operated at supply voltage of IV, and tested successfully.",

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-1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits

Abstract

Publication series

Conference

ASJC Scopus subject areas

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