11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

Shuichi Fujita; Makoto Hirano; Koichi Maezawa; Takashi Mizutani

11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

Research output: Contribution to conference › Paper › peer-review

Abstract

A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

Original language	English
Pages	221-223
Number of pages	3
Publication status	Published - 1987 Apr 1
Event	Pap from the 1987 Natl Conv IEICE - Tokyo, Jpn Duration: 1987 Mar 26 → 1987 Mar 29

Other

Other	Pap from the 1987 Natl Conv IEICE
City	Tokyo, Jpn
Period	87/3/26 → 87/3/29

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.",

abstract = "A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.",

author = "Shuichi Fujita and Makoto Hirano and Koichi Maezawa and Takashi Mizutani",

year = "1987",

month = apr,

day = "1",

language = "English",

pages = "221--223",

note = "Pap from the 1987 Natl Conv IEICE ; Conference date: 26-03-1987 Through 29-03-1987",

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TY - CONF

T1 - 11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

AU - Fujita, Shuichi

AU - Hirano, Makoto

AU - Maezawa, Koichi

AU - Mizutani, Takashi

PY - 1987/4/1

Y1 - 1987/4/1

N2 - A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

AB - A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

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UR - http://www.scopus.com/inward/citedby.url?scp=0023329591&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0023329591

SP - 221

EP - 223

T2 - Pap from the 1987 Natl Conv IEICE

Y2 - 26 March 1987 through 29 March 1987

ER -

11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

Abstract

Other

ASJC Scopus subject areas

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