A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%

Soshi Aonuma; Shinichi Tanaka

doi:10.1109/APMC57107.2023.10439716

A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Continuous Class-B/J amplifiers, capable of achieving a drain efficiency (DE) of 78.5% across a wide frequency range, have been extensively studied. However, practical implementation has posed challenges in managing the load impedances as prescribed by theory, resulting in significant DE fluctuations. This study addresses the issue by (1) analyzing the impact of FET parasitic elements on load impedances and (2) considering higher-order harmonics, which were not considered in the original theory. The proposed design method was validated through the development of a 10W GaN HEMT power amplifier, demonstrating a DE exceeding 70% over a bandwidth of 1.6-2.2 GHz.

Original language	English
Title of host publication	2023 Asia-Pacific Microwave Conference, APMC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	165-167
Number of pages	3
ISBN (Electronic)	9781665494182
DOIs	https://doi.org/10.1109/APMC57107.2023.10439716
Publication status	Published - 2023
Event	31st Asia-Pacific Microwave Conference, APMC 2023 - Taipei, Taiwan, Province of China Duration: 2023 Dec 5 → 2023 Dec 8

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
ISSN (Electronic)	2690-3946

Conference

Conference	31st Asia-Pacific Microwave Conference, APMC 2023
Country/Territory	Taiwan, Province of China
City	Taipei
Period	23/12/5 → 23/12/8

Keywords

class-B
class-J
continuous mode
drain efficiency
GaN
power amplifier

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APMC57107.2023.10439716

Cite this

A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%. / Aonuma, Soshi; Tanaka, Shinichi.
2023 Asia-Pacific Microwave Conference, APMC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 165-167 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aonuma, S & Tanaka, S 2023, A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%. in 2023 Asia-Pacific Microwave Conference, APMC 2023. Asia-Pacific Microwave Conference Proceedings, APMC, Institute of Electrical and Electronics Engineers Inc., pp. 165-167, 31st Asia-Pacific Microwave Conference, APMC 2023, Taipei, Taiwan, Province of China, 23/12/5. https://doi.org/10.1109/APMC57107.2023.10439716

@inproceedings{4dae963dcaf8408c82b2691deda6fb05,

title = "A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%",

abstract = "Continuous Class-B/J amplifiers, capable of achieving a drain efficiency (DE) of 78.5% across a wide frequency range, have been extensively studied. However, practical implementation has posed challenges in managing the load impedances as prescribed by theory, resulting in significant DE fluctuations. This study addresses the issue by (1) analyzing the impact of FET parasitic elements on load impedances and (2) considering higher-order harmonics, which were not considered in the original theory. The proposed design method was validated through the development of a 10W GaN HEMT power amplifier, demonstrating a DE exceeding 70% over a bandwidth of 1.6-2.2 GHz.",

keywords = "class-B, class-J, continuous mode, drain efficiency, GaN, power amplifier",

author = "Soshi Aonuma and Shinichi Tanaka",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 31st Asia-Pacific Microwave Conference, APMC 2023 ; Conference date: 05-12-2023 Through 08-12-2023",

year = "2023",

doi = "10.1109/APMC57107.2023.10439716",

language = "English",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "165--167",

booktitle = "2023 Asia-Pacific Microwave Conference, APMC 2023",

}

TY - GEN

T1 - A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%

AU - Aonuma, Soshi

AU - Tanaka, Shinichi

PY - 2023

Y1 - 2023

N2 - Continuous Class-B/J amplifiers, capable of achieving a drain efficiency (DE) of 78.5% across a wide frequency range, have been extensively studied. However, practical implementation has posed challenges in managing the load impedances as prescribed by theory, resulting in significant DE fluctuations. This study addresses the issue by (1) analyzing the impact of FET parasitic elements on load impedances and (2) considering higher-order harmonics, which were not considered in the original theory. The proposed design method was validated through the development of a 10W GaN HEMT power amplifier, demonstrating a DE exceeding 70% over a bandwidth of 1.6-2.2 GHz.

AB - Continuous Class-B/J amplifiers, capable of achieving a drain efficiency (DE) of 78.5% across a wide frequency range, have been extensively studied. However, practical implementation has posed challenges in managing the load impedances as prescribed by theory, resulting in significant DE fluctuations. This study addresses the issue by (1) analyzing the impact of FET parasitic elements on load impedances and (2) considering higher-order harmonics, which were not considered in the original theory. The proposed design method was validated through the development of a 10W GaN HEMT power amplifier, demonstrating a DE exceeding 70% over a bandwidth of 1.6-2.2 GHz.

KW - class-B

KW - class-J

KW - continuous mode

KW - drain efficiency

KW - GaN

KW - power amplifier

UR - http://www.scopus.com/inward/record.url?scp=85186686816&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85186686816&partnerID=8YFLogxK

U2 - 10.1109/APMC57107.2023.10439716

DO - 10.1109/APMC57107.2023.10439716

M3 - Conference contribution

AN - SCOPUS:85186686816

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

SP - 165

EP - 167

BT - 2023 Asia-Pacific Microwave Conference, APMC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 31st Asia-Pacific Microwave Conference, APMC 2023

Y2 - 5 December 2023 through 8 December 2023

ER -

A 1.6-2.2 GHz Continuous Class-B/J GaN HEMT Power Amplifier with Drain Efficiency Over 70%

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this