A high-speed divide-by-four static frequency divider is fabricated using n+-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering