TY - GEN
T1 - A millimeter-wave resistor-less pulse generator with a new dipole-patch antenna in 65-nm CMOS
AU - Mai Khanh, Nguyen Ngoc
AU - Sasaki, Masahiro
AU - Asada, Kunihiro
PY - 2011/9/13
Y1 - 2011/9/13
N2 - This paper presents a millimeter-wave (nun-wave) pulse generator (PG) integrated with a new dipole-patch antenna in a 65-nm CMOS process for short range and portable active imaging applications. The integrated wide-band dipole-patch antenna is a combination of two type of radiators, patch and dipole, to exploit both advantages of two antenna types. The 395-μm×625-μm dipole-patch antenna in the top metal of the 65-nm CMOS process has a wide 30.21 GHz bandwidth from 73.89-104.1 GHz with minimum return loss of -28.95 dB at 101.6 GHz and resistance from 27.28-47.464 Ω by simulated in EMDS, ADS 2009. We proposed a nun-wave damping PG without any resistor. A peak-to-peak pulse output is 1.66-V with 9.13-ps duration in HSPICE simulation at the antenna input terminals. Radiation measurements by using a horn antenna and a Schottky diode placed at a 39-mm distance from the chip's surface shows the main beam's peak at θmax = 17° with a half-power beam-width (HPBW) of 9° and the second beam's peak at θsec = -23°. Maximum radiated powers in horizontal and vertical planes are respectively 2.436 /μW and 0.5 /μW.
AB - This paper presents a millimeter-wave (nun-wave) pulse generator (PG) integrated with a new dipole-patch antenna in a 65-nm CMOS process for short range and portable active imaging applications. The integrated wide-band dipole-patch antenna is a combination of two type of radiators, patch and dipole, to exploit both advantages of two antenna types. The 395-μm×625-μm dipole-patch antenna in the top metal of the 65-nm CMOS process has a wide 30.21 GHz bandwidth from 73.89-104.1 GHz with minimum return loss of -28.95 dB at 101.6 GHz and resistance from 27.28-47.464 Ω by simulated in EMDS, ADS 2009. We proposed a nun-wave damping PG without any resistor. A peak-to-peak pulse output is 1.66-V with 9.13-ps duration in HSPICE simulation at the antenna input terminals. Radiation measurements by using a horn antenna and a Schottky diode placed at a 39-mm distance from the chip's surface shows the main beam's peak at θmax = 17° with a half-power beam-width (HPBW) of 9° and the second beam's peak at θsec = -23°. Maximum radiated powers in horizontal and vertical planes are respectively 2.436 /μW and 0.5 /μW.
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U2 - 10.1109/NEWCAS.2011.5981261
DO - 10.1109/NEWCAS.2011.5981261
M3 - Conference contribution
AN - SCOPUS:80052537715
SN - 9781612841359
T3 - 2011 IEEE 9th International New Circuits and Systems Conference, NEWCAS 2011
SP - 426
EP - 429
BT - 2011 IEEE 9th International New Circuits and Systems Conference, NEWCAS 2011
T2 - 2011 IEEE 9th International New Circuits and Systems Conference, NEWCAS 2011
Y2 - 26 June 2011 through 29 June 2011
ER -