Abstract
A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
Original language | English |
---|---|
Article number | 425305 |
Journal | Nanotechnology |
Volume | 20 |
Issue number | 42 |
DOIs | |
Publication status | Published - 2009 Oct 12 |
Externally published | Yes |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering