A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement

K. Kita, M. Sasagawa, K. Kyuno, A. Torium

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	166-170
Journal	2003 Int. Conference on Characterization and Metrology for ULSI Technology； AIP Conf. Proceedings 550
Publication status	Published - 2003 Mar 1

Cite this

Research output: Contribution to journal › Article › peer-review

@article{2bb1151252c24efd953c0e870d3cc76a,

title = "A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement",

author = "K. Kita and M. Sasagawa and K. Kyuno and A. Torium",

year = "2003",

month = mar,

day = "1",

language = "English",

pages = "166--170",

journal = "2003 Int. Conference on Characterization and Metrology for ULSI Technology； AIP Conf. Proceedings 550",

}

TY - JOUR

T1 - A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement

AU - Kita, K.

AU - Sasagawa, M.

AU - Kyuno, K.

AU - Torium, A.

PY - 2003/3/1

Y1 - 2003/3/1

M3 - Article

SP - 166

EP - 170

JO - 2003 Int. Conference on Characterization and Metrology for ULSI Technology； AIP Conf. Proceedings 550

JF - 2003 Int. Conference on Characterization and Metrology for ULSI Technology； AIP Conf. Proceedings 550

ER -