A numerical study on oxygen transport in silicon melt in a double-crucible method

Naoki Ono; Michio Kida; Yoshiaki Arai; Kensho Sahira

doi:10.1016/0022-0248(94)90981-4

A numerical study on oxygen transport in silicon melt in a double-crucible method

Naoki Ono, Michio Kida, Yoshiaki Arai, Kensho Sahira

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.

Original language	English
Pages (from-to)	427-434
Number of pages	8
Journal	Journal of Crystal Growth
Volume	137
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(94)90981-4
Publication status	Published - 1994 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(94)90981-4

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abstract = "Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.",

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AU - Kida, Michio

AU - Arai, Yoshiaki

AU - Sahira, Kensho

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Y1 - 1994/4/1

N2 - Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.

AB - Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.

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ER -

A numerical study on oxygen transport in silicon melt in a double-crucible method

Abstract

ASJC Scopus subject areas

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