A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

K. Oe; M. Hirano; K. Arai; F. Yanagawa; K. Tsubaki

doi:10.1016/0039-6028(86)90437-1

A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

K. Oe, M. Hirano, K. Arai, F. Yanagawa, K. Tsubaki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

Original language	English
Pages (from-to)	378-381
Number of pages	4
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90437-1
Publication status	Published - 1986 Aug 3

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(86)90437-1

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@article{a4eeb0ced2514f41b39a0891e253f698,

title = "A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas",

abstract = "A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.",

author = "K. Oe and M. Hirano and K. Arai and F. Yanagawa and K. Tsubaki",

year = "1986",

month = aug,

day = "3",

doi = "10.1016/0039-6028(86)90437-1",

language = "English",

volume = "174",

pages = "378--381",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

AU - Oe, K.

AU - Hirano, M.

AU - Arai, K.

AU - Yanagawa, F.

AU - Tsubaki, K.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

AB - A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

UR - http://www.scopus.com/inward/record.url?scp=46149128772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46149128772&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(86)90437-1

DO - 10.1016/0039-6028(86)90437-1

M3 - Article

AN - SCOPUS:46149128772

SN - 0039-6028

VL - 174

SP - 378

EP - 381

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

Abstract

ASJC Scopus subject areas

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