A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen

Makoto Saito; Ichiro Touno; Kayoko Omiya; Tetsuya Homma; Takao Nagatomo

doi:10.1149/1.1485777

A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen

Makoto Saito, Ichiro Touno, Kayoko Omiya, Tetsuya Homma, Takao Nagatomo

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A photoresist removal process with plasma treatment after aluminum film etching was developed. During a previous reactive ion etching step, reaction products are deposited on the sidewalls of the patterns etched in the Al film and the photoresist on top of it. The deposited material is analyzed by X-ray photoelectron spectroscopy and found to consist of chlorides of Al. It is demonstrated than the deposited film can be removed by treatment in inductively coupled plasma using hydrogen-containing gas (methyl alcohol in the present study) with a radio frequency bias applied to the substrate. The optical spectra indicate that the reactive species are hydrogen and other reactive species (e.g., CH and OH) generated by dissociation of methyl alcohol.

Original language	English
Pages (from-to)	G451-G454
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	8
DOIs	https://doi.org/10.1149/1.1485777
Publication status	Published - 2002 Aug 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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abstract = "A photoresist removal process with plasma treatment after aluminum film etching was developed. During a previous reactive ion etching step, reaction products are deposited on the sidewalls of the patterns etched in the Al film and the photoresist on top of it. The deposited material is analyzed by X-ray photoelectron spectroscopy and found to consist of chlorides of Al. It is demonstrated than the deposited film can be removed by treatment in inductively coupled plasma using hydrogen-containing gas (methyl alcohol in the present study) with a radio frequency bias applied to the substrate. The optical spectra indicate that the reactive species are hydrogen and other reactive species (e.g., CH and OH) generated by dissociation of methyl alcohol.",

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AU - Saito, Makoto

AU - Touno, Ichiro

AU - Omiya, Kayoko

AU - Homma, Tetsuya

AU - Nagatomo, Takao

PY - 2002/8/1

Y1 - 2002/8/1

N2 - A photoresist removal process with plasma treatment after aluminum film etching was developed. During a previous reactive ion etching step, reaction products are deposited on the sidewalls of the patterns etched in the Al film and the photoresist on top of it. The deposited material is analyzed by X-ray photoelectron spectroscopy and found to consist of chlorides of Al. It is demonstrated than the deposited film can be removed by treatment in inductively coupled plasma using hydrogen-containing gas (methyl alcohol in the present study) with a radio frequency bias applied to the substrate. The optical spectra indicate that the reactive species are hydrogen and other reactive species (e.g., CH and OH) generated by dissociation of methyl alcohol.

AB - A photoresist removal process with plasma treatment after aluminum film etching was developed. During a previous reactive ion etching step, reaction products are deposited on the sidewalls of the patterns etched in the Al film and the photoresist on top of it. The deposited material is analyzed by X-ray photoelectron spectroscopy and found to consist of chlorides of Al. It is demonstrated than the deposited film can be removed by treatment in inductively coupled plasma using hydrogen-containing gas (methyl alcohol in the present study) with a radio frequency bias applied to the substrate. The optical spectra indicate that the reactive species are hydrogen and other reactive species (e.g., CH and OH) generated by dissociation of methyl alcohol.

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A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen

Abstract

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