A quarter-micron planarized interconnection technology with self-aligned plug

Kazuyoshi Ueno; K. Ohto; K. Tsunenari; K. Kajiyana; K. Kikuta; T. Kikkawa

doi:10.1109/IEDM.1992.307366

A quarter-micron planarized interconnection technology with self-aligned plug

Kazuyoshi Ueno, K. Ohto, K. Tsunenari, K. Kajiyana, K. Kikuta, T. Kikkawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO₂ as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	305-308
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307366
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 1992 Dec 13 → 1992 Dec 16

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	92/12/13 → 92/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.1992.307366

Cite this

Ueno, K., Ohto, K., Tsunenari, K., Kajiyana, K., Kikuta, K., & Kikkawa, T. (1992). A quarter-micron planarized interconnection technology with self-aligned plug. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 305-308). Article 307366 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307366

A quarter-micron planarized interconnection technology with self-aligned plug. / Ueno, Kazuyoshi; Ohto, K.; Tsunenari, K. et al.
1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 305-308 307366 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ueno, K, Ohto, K, Tsunenari, K, Kajiyana, K, Kikuta, K & Kikkawa, T 1992, A quarter-micron planarized interconnection technology with self-aligned plug. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307366, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 305-308, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 92/12/13. https://doi.org/10.1109/IEDM.1992.307366

Ueno K, Ohto K, Tsunenari K, Kajiyana K, Kikuta K, Kikkawa T. A quarter-micron planarized interconnection technology with self-aligned plug. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 305-308. 307366. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.1992.307366

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abstract = "In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO2 as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.",

author = "Kazuyoshi Ueno and K. Ohto and K. Tsunenari and K. Kajiyana and K. Kikuta and T. Kikkawa",

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AU - Kikkawa, T.

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N2 - In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO2 as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.

AB - In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO2 as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.

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A quarter-micron planarized interconnection technology with self-aligned plug

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