A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation

N. Oda; S. Ito; T. Takewaki; K. Shiba; H. Kunishima; N. Hironaga; I. Honma; H. Nanba; S. Yokogawa; A. Kameyama; T. Goto; T. Usami; K. Ohto; A. Kubo; M. Suzuki; Y. Yamamoto; S. Watanabe; K. Yamada; M. Ikeda; K. Ueno;T. Horiuchi; Kazuyoshi Ueno

A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation

N. Oda, S. Ito, T. Takewaki, K. Shiba, H. Kunishima, N. Hironaga, I. Honma, H. Nanba, S. Yokogawa, A. Kameyama, T. Goto, T. Usami, K. Ohto, A. Kubo, M. Suzuki, Y. Yamamoto, S. Watanabe, K. Yamada, M. Ikeda, K. Ueno;T. HoriuchiKazuyoshi Ueno

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Original language	English
Pages (from-to)	954-961
Journal	Japanese Journal of Applied Physics
Volume	46
Publication status	Published - 2007 Mar 5

Cite this

Oda, N., Ito, S., Takewaki, T., Shiba, K., Kunishima, H., Hironaga, N., Honma, I., Nanba, H., Yokogawa, S., Kameyama, A., Goto, T., Usami, T., Ohto, K., Kubo, A., Suzuki, M., Yamamoto, Y., Watanabe, S., Yamada, K., Ikeda, M., ... Ueno, K. (2007). A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation. Japanese Journal of Applied Physics, 46, 954-961.

Oda, N, Ito, S, Takewaki, T, Shiba, K, Kunishima, H, Hironaga, N, Honma, I, Nanba, H, Yokogawa, S, Kameyama, A, Goto, T, Usami, T, Ohto, K, Kubo, A, Suzuki, M, Yamamoto, Y, Watanabe, S, Yamada, K, Ikeda, M, Horiuchi, KUT & Ueno, K 2007, 'A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation', Japanese Journal of Applied Physics, vol. 46, pp. 954-961.

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title = "A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation",

author = "N. Oda and S. Ito and T. Takewaki and K. Shiba and H. Kunishima and N. Hironaga and I. Honma and H. Nanba and S. Yokogawa and A. Kameyama and T. Goto and T. Usami and K. Ohto and A. Kubo and M. Suzuki and Y. Yamamoto and S. Watanabe and K. Yamada and M. Ikeda and Horiuchi, {K. Ueno;T.} and Kazuyoshi Ueno",

year = "2007",

month = mar,

day = "5",

language = "English",

volume = "46",

pages = "954--961",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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TY - JOUR

T1 - A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation

AU - Oda, N.

AU - Ito, S.

AU - Takewaki, T.

AU - Shiba, K.

AU - Kunishima, H.

AU - Hironaga, N.

AU - Honma, I.

AU - Nanba, H.

AU - Yokogawa, S.

AU - Kameyama, A.

AU - Goto, T.

AU - Usami, T.

AU - Ohto, K.

AU - Kubo, A.

AU - Suzuki, M.

AU - Yamamoto, Y.

AU - Watanabe, S.

AU - Yamada, K.

AU - Ikeda, M.

AU - Horiuchi, K. Ueno;T.

AU - Ueno, Kazuyoshi

PY - 2007/3/5

Y1 - 2007/3/5

M3 - Article

SN - 0021-4922

VL - 46

SP - 954

EP - 961

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -