A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamazaki

Research output: Contribution to journal › Article › peer-review

Cite this

@article{d3fd3d4c06e6482abf0406bda4b410c9,

title = "A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications",

author = "Masami Tokumitsu and Kazumi Nishimura and Makoto Hirano and Kimiyoshi Yamazaki",

year = "1995",

month = apr,

day = "1",

language = "English",

volume = "E-78-C",

pages = "1189--1194",

journal = "IEICE Trans.Electron",

}