A0.1 um Self-Aligned-Gate GaAs MESFETwith Multilayer Interconnection Structure for Ultra-High-Speed Ics

Masami Tokumitsu, Makoto Hirano, Taiichi Otsuji, Satoru Yamaguchi, Kimitoshi Yamazaki

Research output: Contribution to journal › Article › peer-review

Cite this

@article{b11be12d84e34eeca38e8b480f5b8784,

title = "A0.1 um Self-Aligned-Gate GaAs MESFETwith Multilayer Interconnection Structure for Ultra-High-Speed Ics",

author = "Masami Tokumitsu and Makoto Hirano and Taiichi Otsuji and Satoru Yamaguchi and Kimitoshi Yamazaki",

year = "1996",

month = apr,

day = "1",

language = "English",

pages = "211--214",

journal = "IEEE IEDM Tch.Dig.",

}