Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

T. Yanagi; Y. Ohki; H. Nishikawa

Absorption changes induced by UV-photon irradiation in Ge-doped SiO₂ thin films fabricated by plasma CVD method from tetraethoxysilane

T. Yanagi, Y. Ohki, H. Nishikawa

Research output: Contribution to conference › Paper › peer-review

Abstract

Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO₂ thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO₂ fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO₂ with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

Original language	English
Pages	1088-1091
Number of pages	4
Publication status	Published - 2003 Oct 20
Event	Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya, Japan Duration: 2003 Jun 1 → 2003 Jun 5

Conference

Conference	Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials
Country/Territory	Japan
City	Nagoya
Period	03/6/1 → 03/6/5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry

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Absorption changes induced by UV-photon irradiation in Ge-doped SiO₂ thin films fabricated by plasma CVD method from tetraethoxysilane. / Yanagi, T.; Ohki, Y.; Nishikawa, H.
2003. 1088-1091 Paper presented at Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, Japan.

Research output: Contribution to conference › Paper › peer-review

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title = "Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane",

abstract = "Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.",

author = "T. Yanagi and Y. Ohki and H. Nishikawa",

year = "2003",

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T1 - Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

AU - Yanagi, T.

AU - Ohki, Y.

AU - Nishikawa, H.

PY - 2003/10/20

Y1 - 2003/10/20

N2 - Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

AB - Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

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M3 - Paper

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T2 - Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials

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ER -

Absorption changes induced by UV-photon irradiation in Ge-doped SiO₂ thin films fabricated by plasma CVD method from tetraethoxysilane

Abstract

Conference

ASJC Scopus subject areas

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