AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu; Juro Mita; Masanori Ito; Yoshiaki Sano; Hiroyasu Ishikawa; Takashi Egawa

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu, Juro Mita, Masanori Ito, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency f_T of 56 GHz and the maximum oscillation frequency f_max of 115 GHz.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
Publisher	Electrochemical Society Inc.
Pages	259-265
Number of pages	7
Edition	2
ISBN (Electronic)	9781607685395
Publication status	Published - 2006
Externally published	Yes
Event	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States Duration: 2005 Oct 16 → 2005 Oct 21

Publication series

Name	ECS Transactions
Number	2
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	05/10/16 → 05/10/21

ASJC Scopus subject areas

Engineering(all)

Cite this

Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H., & Egawa, T. (2006). AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI (2 ed., pp. 259-265). (ECS Transactions; Vol. 1, No. 2). Electrochemical Society Inc..

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. / Kaifu, Katsuaki; Mita, Juro; Ito, Masanori et al.

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. p. 259-265 (ECS Transactions; Vol. 1, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaifu, K, Mita, J, Ito, M, Sano, Y, Ishikawa, H & Egawa, T 2006, AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. in State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 edn, ECS Transactions, no. 2, vol. 1, Electrochemical Society Inc., pp. 259-265, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.

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title = "AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates",

abstract = "In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.",

author = "Katsuaki Kaifu and Juro Mita and Masanori Ito and Yoshiaki Sano and Hiroyasu Ishikawa and Takashi Egawa",

year = "2006",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

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note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

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T1 - AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

AU - Kaifu, Katsuaki

AU - Mita, Juro

AU - Ito, Masanori

AU - Sano, Yoshiaki

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

PY - 2006

Y1 - 2006

N2 - In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.

AB - In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.

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BT - State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

PB - Electrochemical Society Inc.

T2 - 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society

Y2 - 16 October 2005 through 21 October 2005

ER -

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

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