An Asymmetric Side Wall Process for High Performance LDD MOSFET's

T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	186-190
Journal	IEEE Transactions on Electron Devices
Volume	41
Publication status	Published - 1994 Feb 1

Cite this

@article{20b963b1f2d44d9e8bbae4f5143ba0aa,

title = "An Asymmetric Side Wall Process for High Performance LDD MOSFET's",

author = "T.Horiuchi T.Horiuchi and T.Homma T.Homma and Y.Murao Y.Murao and K.Okumura K.Okumura and Tetsuya Homma",

year = "1994",

month = feb,

day = "1",

language = "English",

volume = "41",

pages = "186--190",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - An Asymmetric Side Wall Process for High Performance LDD MOSFET's

AU - T.Horiuchi, T.Horiuchi

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - K.Okumura, K.Okumura

AU - Homma, Tetsuya

PY - 1994/2/1

Y1 - 1994/2/1

M3 - Article

SN - 0018-9383

VL - 41

SP - 186

EP - 190

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -