An Interlayer Dielectric Films Formation Technology Using TEOS/O3 APCVD SiO2 Films on Dual Frequency TEOS/O2 PECVD SiO2 Films

A.Kubo A.Kubo, K.Hirose K.Hirose, T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	94-100
Journal	Proceedings of 11th VLSI Multilevel Interconnection Conference
Publication status	Published - 1994 Jun 7

Cite this

@article{5ae69003802b469d9b3525aaa4f80ed0,

title = "An Interlayer Dielectric Films Formation Technology Using TEOS/O3 APCVD SiO2 Films on Dual Frequency TEOS/O2 PECVD SiO2 Films",

author = "A.Kubo A.Kubo and K.Hirose K.Hirose and T.Homma T.Homma and Y.Murao Y.Murao and Tetsuya Homma",

year = "1994",

month = jun,

day = "7",

language = "English",

pages = "94--100",

journal = "Proceedings of 11th VLSI Multilevel Interconnection Conference",

}

TY - JOUR

T1 - An Interlayer Dielectric Films Formation Technology Using TEOS/O3 APCVD SiO2 Films on Dual Frequency TEOS/O2 PECVD SiO2 Films

AU - A.Kubo, A.Kubo

AU - K.Hirose, K.Hirose

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1994/6/7

Y1 - 1994/6/7

M3 - Article

SP - 94

EP - 100

JO - Proceedings of 11th VLSI Multilevel Interconnection Conference

JF - Proceedings of 11th VLSI Multilevel Interconnection Conference

ER -