An SiO2 Film Deposition Technology using Tetraethylorthosilicate (TEOS) and Ozone for Interlayer Metal Dielectrics

A.Kubo A.Kubo, T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1769-1773
Journal	Journal of the Electrochemical Society
Volume	143
Publication status	Published - 1996 May 1

Cite this

@article{14a3682741fe4c98b193a97cb3497b4b,

title = "An SiO2 Film Deposition Technology using Tetraethylorthosilicate (TEOS) and Ozone for Interlayer Metal Dielectrics",

author = "A.Kubo A.Kubo and T.Homma T.Homma and Y.Murao Y.Murao and Tetsuya Homma",

year = "1996",

month = may,

day = "1",

language = "English",

volume = "143",

pages = "1769--1773",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - An SiO2 Film Deposition Technology using Tetraethylorthosilicate (TEOS) and Ozone for Interlayer Metal Dielectrics

AU - A.Kubo, A.Kubo

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1996/5/1

Y1 - 1996/5/1

M3 - Article

SN - 0013-4651

VL - 143

SP - 1769

EP - 1773

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -