An SiO2 film deposition technology using tetraethylorthosilicate and ozone for interlayer metal dielectrics

Akira Kubo; Tetsuya Homma; Yukinobu Murao

doi:10.1149/1.1836714

An SiO₂ film deposition technology using tetraethylorthosilicate and ozone for interlayer metal dielectrics

Akira Kubo, Tetsuya Homma, Yukinobu Murao

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A void-free SiO₂ interlayer dielectric film formation technology has been developed. This technology utilizes tetraethylorthosilicate [TEOS, Si(OC₂H₅)₄]/ozone (O₃) atmospheric pressure chemical vapor deposition (APCVD) SiO₂ film gap-filling, and the TEOS-based dual frequency plasma enhanced vapor deposition (PECVD) SiO₂ film as an underlayer of TEOS/O₃ APCVD SiO₂ film. This technology enables the formation of void-free SiO₂ interlayer dielectric films without any pretreatment for the underlayer between aluminum wirings line and space of 600 and 600 nm, respectively. Single-frequency PECVD SiO₂ films are also applied as an underlayer of TEOS/O₃ APCVD SiO₂ gap-filling. However, void-free gap-filling cannot be achieved, even using the single frequency PECVD SiO₂ underlayer. To clarify the mechanism of the void-free gap-filling, the underlayer PECVD SiO₂ film properties are investigated. The SiO₂ film density at the Al wiring pattern's sidewall of the dual-frequency PECVD SiO₂ films is equal to that at the pattern's bottom, while the density at the pattern's sidewall formed using single-frequency PECVD SiO₂ films is lower than that at the pattern's bottom. The carbon concentration for the dual-frequency PECVD SiO₂ films is lower than that for the single-frequency PECVD SiO₂ films. The H₂O and acetaldehyde (CH₃CHO) detected from the dual-frequency PECVD SiO₂ films due to the oxidation of the ethoxy group, is much more than that from the single-frequency PECVD SiO₂ films. Based on the experimental results, the mechanism of void-free gap-filling of TEOS/O₃ APCVD SiO₂ films is considered to consist of three steps; (i) involving R ions (R, alkyl group) into the PECVD SiO₂ films during film deposition, (ii) Si-OR bonds formation at the PECVD SiO₂ films' surface, and (iii) oligomers flow at TEOS/O₃ APCVD SiO₂ film deposition. It is considered that the oligomers flow is promoted by the Si-OR bonds, resulting in the void-free gap-filling. The dual-frequency PECVD SiO₂ films can improve the gap-filling of TEOS/O₃ APCVD SiO₂ films.

Original language	English
Pages (from-to)	1769-1773
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	143
Issue number	5
DOIs	https://doi.org/10.1149/1.1836714
Publication status	Published - 1996 May
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.1836714

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title = "An SiO2 film deposition technology using tetraethylorthosilicate and ozone for interlayer metal dielectrics",

abstract = "A void-free SiO2 interlayer dielectric film formation technology has been developed. This technology utilizes tetraethylorthosilicate [TEOS, Si(OC2H5)4]/ozone (O3) atmospheric pressure chemical vapor deposition (APCVD) SiO2 film gap-filling, and the TEOS-based dual frequency plasma enhanced vapor deposition (PECVD) SiO2 film as an underlayer of TEOS/O3 APCVD SiO2 film. This technology enables the formation of void-free SiO2 interlayer dielectric films without any pretreatment for the underlayer between aluminum wirings line and space of 600 and 600 nm, respectively. Single-frequency PECVD SiO2 films are also applied as an underlayer of TEOS/O3 APCVD SiO2 gap-filling. However, void-free gap-filling cannot be achieved, even using the single frequency PECVD SiO2 underlayer. To clarify the mechanism of the void-free gap-filling, the underlayer PECVD SiO2 film properties are investigated. The SiO2 film density at the Al wiring pattern's sidewall of the dual-frequency PECVD SiO2 films is equal to that at the pattern's bottom, while the density at the pattern's sidewall formed using single-frequency PECVD SiO2 films is lower than that at the pattern's bottom. The carbon concentration for the dual-frequency PECVD SiO2 films is lower than that for the single-frequency PECVD SiO2 films. The H2O and acetaldehyde (CH3CHO) detected from the dual-frequency PECVD SiO2 films due to the oxidation of the ethoxy group, is much more than that from the single-frequency PECVD SiO2 films. Based on the experimental results, the mechanism of void-free gap-filling of TEOS/O3 APCVD SiO2 films is considered to consist of three steps; (i) involving R ions (R, alkyl group) into the PECVD SiO2 films during film deposition, (ii) Si-OR bonds formation at the PECVD SiO2 films' surface, and (iii) oligomers flow at TEOS/O3 APCVD SiO2 film deposition. It is considered that the oligomers flow is promoted by the Si-OR bonds, resulting in the void-free gap-filling. The dual-frequency PECVD SiO2 films can improve the gap-filling of TEOS/O3 APCVD SiO2 films.",

author = "Akira Kubo and Tetsuya Homma and Yukinobu Murao",

year = "1996",

month = may,

doi = "10.1149/1.1836714",

language = "English",

volume = "143",

pages = "1769--1773",

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publisher = "Electrochemical Society, Inc.",

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T1 - An SiO2 film deposition technology using tetraethylorthosilicate and ozone for interlayer metal dielectrics

AU - Kubo, Akira

AU - Homma, Tetsuya

AU - Murao, Yukinobu

PY - 1996/5

Y1 - 1996/5

N2 - A void-free SiO2 interlayer dielectric film formation technology has been developed. This technology utilizes tetraethylorthosilicate [TEOS, Si(OC2H5)4]/ozone (O3) atmospheric pressure chemical vapor deposition (APCVD) SiO2 film gap-filling, and the TEOS-based dual frequency plasma enhanced vapor deposition (PECVD) SiO2 film as an underlayer of TEOS/O3 APCVD SiO2 film. This technology enables the formation of void-free SiO2 interlayer dielectric films without any pretreatment for the underlayer between aluminum wirings line and space of 600 and 600 nm, respectively. Single-frequency PECVD SiO2 films are also applied as an underlayer of TEOS/O3 APCVD SiO2 gap-filling. However, void-free gap-filling cannot be achieved, even using the single frequency PECVD SiO2 underlayer. To clarify the mechanism of the void-free gap-filling, the underlayer PECVD SiO2 film properties are investigated. The SiO2 film density at the Al wiring pattern's sidewall of the dual-frequency PECVD SiO2 films is equal to that at the pattern's bottom, while the density at the pattern's sidewall formed using single-frequency PECVD SiO2 films is lower than that at the pattern's bottom. The carbon concentration for the dual-frequency PECVD SiO2 films is lower than that for the single-frequency PECVD SiO2 films. The H2O and acetaldehyde (CH3CHO) detected from the dual-frequency PECVD SiO2 films due to the oxidation of the ethoxy group, is much more than that from the single-frequency PECVD SiO2 films. Based on the experimental results, the mechanism of void-free gap-filling of TEOS/O3 APCVD SiO2 films is considered to consist of three steps; (i) involving R ions (R, alkyl group) into the PECVD SiO2 films during film deposition, (ii) Si-OR bonds formation at the PECVD SiO2 films' surface, and (iii) oligomers flow at TEOS/O3 APCVD SiO2 film deposition. It is considered that the oligomers flow is promoted by the Si-OR bonds, resulting in the void-free gap-filling. The dual-frequency PECVD SiO2 films can improve the gap-filling of TEOS/O3 APCVD SiO2 films.

AB - A void-free SiO2 interlayer dielectric film formation technology has been developed. This technology utilizes tetraethylorthosilicate [TEOS, Si(OC2H5)4]/ozone (O3) atmospheric pressure chemical vapor deposition (APCVD) SiO2 film gap-filling, and the TEOS-based dual frequency plasma enhanced vapor deposition (PECVD) SiO2 film as an underlayer of TEOS/O3 APCVD SiO2 film. This technology enables the formation of void-free SiO2 interlayer dielectric films without any pretreatment for the underlayer between aluminum wirings line and space of 600 and 600 nm, respectively. Single-frequency PECVD SiO2 films are also applied as an underlayer of TEOS/O3 APCVD SiO2 gap-filling. However, void-free gap-filling cannot be achieved, even using the single frequency PECVD SiO2 underlayer. To clarify the mechanism of the void-free gap-filling, the underlayer PECVD SiO2 film properties are investigated. The SiO2 film density at the Al wiring pattern's sidewall of the dual-frequency PECVD SiO2 films is equal to that at the pattern's bottom, while the density at the pattern's sidewall formed using single-frequency PECVD SiO2 films is lower than that at the pattern's bottom. The carbon concentration for the dual-frequency PECVD SiO2 films is lower than that for the single-frequency PECVD SiO2 films. The H2O and acetaldehyde (CH3CHO) detected from the dual-frequency PECVD SiO2 films due to the oxidation of the ethoxy group, is much more than that from the single-frequency PECVD SiO2 films. Based on the experimental results, the mechanism of void-free gap-filling of TEOS/O3 APCVD SiO2 films is considered to consist of three steps; (i) involving R ions (R, alkyl group) into the PECVD SiO2 films during film deposition, (ii) Si-OR bonds formation at the PECVD SiO2 films' surface, and (iii) oligomers flow at TEOS/O3 APCVD SiO2 film deposition. It is considered that the oligomers flow is promoted by the Si-OR bonds, resulting in the void-free gap-filling. The dual-frequency PECVD SiO2 films can improve the gap-filling of TEOS/O3 APCVD SiO2 films.

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An SiO₂ film deposition technology using tetraethylorthosilicate and ozone for interlayer metal dielectrics

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