An SiO₂ film deposition technology using tetraethylorthosilicate and ozone for interlayer metal dielectrics

Engineering & Materials Science

• Acetaldehyde 6%
• Aluminum 3%
• Atmospheric pressure 28%
• Carbon 3%
• Chemical vapor deposition 29%
• Dielectric films 12%
• Electric wiring 9%
• Ions 3%
• Metals 50%
• Oligomers 12%
• Oxidation 3%
• Ozone 100%
• Plasmas 49%
• Vapor deposition 85%

Chemical Compounds

• Acetaldehyde 4%
• Alkyl Group 4%
• Carbon Atom 1%
• Chemical Vapour Deposition 22%
• Dielectric Film 12%
• Dielectric Material 69%
• Ethoxy Group 5%
• Flow 5%
• Ion 1%
• Liquid Film 38%
• Metal 35%
• Oligomer 6%
• Oxidation Reaction 1%
• Ozone 80%
• Plasma 33%
• Pressure 14%
• Surface 1%