Abstract
Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
| Original language | English |
|---|---|
| Pages (from-to) | 350-353 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 13 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - 2016 May 1 |
Keywords
- Breakdown voltage
- Field plate
- GaN HEMT
- Two-dimensional analysis
ASJC Scopus subject areas
- Condensed Matter Physics