Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Hiraku Onodera, Hideyuki Hanawa, Kazushige Horio

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

Original languageEnglish
Pages (from-to)350-353
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number5-6
Publication statusPublished - 2016 May 1


  • Breakdown voltage
  • Field plate
  • GaN HEMT
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Condensed Matter Physics


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