Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Kai Nakamura; Hideyuki Hanawa; Kazushige Horio

doi:10.1109/BCICTS.2018.8551096

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Kai Nakamura, Hideyuki Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

Original language	English
Title of host publication	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	247-250
Number of pages	4
ISBN (Electronic)	9781538665022
DOIs	https://doi.org/10.1109/BCICTS.2018.8551096
Publication status	Published - 2018 Nov 27
Event	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States Duration: 2018 Oct 15 → 2018 Oct 17

Other

Other	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
Country/Territory	United States
City	San Diego
Period	18/10/15 → 18/10/17

Keywords

Breakdown voltage
GaN
HEMT
High-k passivation layer

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation
Electronic, Optical and Magnetic Materials

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10.1109/BCICTS.2018.8551096

Cite this

Nakamura, K., Hanawa, H., & Horio, K. (2018). Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp. 247-250). [8551096] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS.2018.8551096

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. / Nakamura, Kai; Hanawa, Hideyuki; Horio, Kazushige.

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 247-250 8551096.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakamura, K, Hanawa, H & Horio, K 2018, Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018., 8551096, Institute of Electrical and Electronics Engineers Inc., pp. 247-250, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, San Diego, United States, 18/10/15. https://doi.org/10.1109/BCICTS.2018.8551096

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abstract = "Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.",

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PY - 2018/11/27

Y1 - 2018/11/27

N2 - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

AB - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

KW - Breakdown voltage

KW - GaN

KW - HEMT

KW - High-k passivation layer

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Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

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Keywords

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