TY - GEN
T1 - Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers
AU - Nakano, K.
AU - Hanawa, H.
AU - Horio, K.
PY - 2018/5
Y1 - 2018/5
N2 - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.
AB - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.
KW - GaN
KW - HEMT
KW - breakdown voltage
KW - high-k passivation layer
UR - http://www.scopus.com/inward/record.url?scp=85068343399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068343399&partnerID=8YFLogxK
U2 - 10.1109/WiPDAAsia.2018.8734668
DO - 10.1109/WiPDAAsia.2018.8734668
M3 - Conference contribution
AN - SCOPUS:85068343399
T3 - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
SP - 131
EP - 134
BT - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Y2 - 16 May 2018 through 18 May 2018
ER -