Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

T. Kabemura; H. Hanawa; Kazushige Horio

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

T. Kabemura, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is well known that the introduction of field plate increases the breakdown voltage V_br of AlGaN/GaN HEMTs. As another way to improve V_br, using a high-k passivation layer is proposed. So, in this study, we combine the two factors and analyzed the breakdown characteristics of field-plate AlGaN/GaN HEMTs as parameters of its rength L_FP and the relative permittivity of passivation layer er. It is shown that the enhancement of V_br with increasing ϵ_τ is more significant when L_FP is relatively short. There is an optimum value of L_FP to obtain the highest V_br, and it is around 0.2 and 0.3 μm when the gate-to-drain distance is 1.5 μm When L_FP = 0.3 μm and ϵ_τr takes a high value of 50, the electric field between the field-plate edge and the drain becomes rather uniform, and V_br becomes about 400 V, which corresponds to an effective electric field of 2.7 MV/cm between gate and drain.

Original language	English
Title of host publication	TechConnect Briefs 2018 - Informatics, Electronics and Microsystems
Editors	Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
Publisher	TechConnect
Pages	28-31
Number of pages	4
Volume	4
ISBN (Electronic)	9780998878256
Publication status	Published - 2018 Jan 1
Event	11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States Duration: 2018 May 13 → 2018 May 16

Other

Other	11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
Country/Territory	United States
City	Anaheim
Period	18/5/13 → 18/5/16

Keywords

Breakdown voltage
Field plate
GaN HEMT
High-k passivation layer

ASJC Scopus subject areas

Materials Science(all)

Cite this

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. / Kabemura, T.; Hanawa, H.; Horio, Kazushige.

TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. ed. / Matthew Laudon; Fiona Case; Bart Romanowicz; Fiona Case. Vol. 4 TechConnect, 2018. p. 28-31.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kabemura, T, Hanawa, H & Horio, K 2018, Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. in M Laudon, F Case, B Romanowicz & F Case (eds), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. vol. 4, TechConnect, pp. 28-31, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference, Anaheim, United States, 18/5/13.

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abstract = "It is well known that the introduction of field plate increases the breakdown voltage Vbr of AlGaN/GaN HEMTs. As another way to improve Vbr, using a high-k passivation layer is proposed. So, in this study, we combine the two factors and analyzed the breakdown characteristics of field-plate AlGaN/GaN HEMTs as parameters of its rength LFP and the relative permittivity of passivation layer er. It is shown that the enhancement of Vbr with increasing ϵτ is more significant when LFP is relatively short. There is an optimum value of LFP to obtain the highest Vbr, and it is around 0.2 and 0.3 μm when the gate-to-drain distance is 1.5 μm When LFP = 0.3 μm and ϵτr takes a high value of 50, the electric field between the field-plate edge and the drain becomes rather uniform, and Vbr becomes about 400 V, which corresponds to an effective electric field of 2.7 MV/cm between gate and drain.",

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N2 - It is well known that the introduction of field plate increases the breakdown voltage Vbr of AlGaN/GaN HEMTs. As another way to improve Vbr, using a high-k passivation layer is proposed. So, in this study, we combine the two factors and analyzed the breakdown characteristics of field-plate AlGaN/GaN HEMTs as parameters of its rength LFP and the relative permittivity of passivation layer er. It is shown that the enhancement of Vbr with increasing ϵτ is more significant when LFP is relatively short. There is an optimum value of LFP to obtain the highest Vbr, and it is around 0.2 and 0.3 μm when the gate-to-drain distance is 1.5 μm When LFP = 0.3 μm and ϵτr takes a high value of 50, the electric field between the field-plate edge and the drain becomes rather uniform, and Vbr becomes about 400 V, which corresponds to an effective electric field of 2.7 MV/cm between gate and drain.

AB - It is well known that the introduction of field plate increases the breakdown voltage Vbr of AlGaN/GaN HEMTs. As another way to improve Vbr, using a high-k passivation layer is proposed. So, in this study, we combine the two factors and analyzed the breakdown characteristics of field-plate AlGaN/GaN HEMTs as parameters of its rength LFP and the relative permittivity of passivation layer er. It is shown that the enhancement of Vbr with increasing ϵτ is more significant when LFP is relatively short. There is an optimum value of LFP to obtain the highest Vbr, and it is around 0.2 and 0.3 μm when the gate-to-drain distance is 1.5 μm When LFP = 0.3 μm and ϵτr takes a high value of 50, the electric field between the field-plate edge and the drain becomes rather uniform, and Vbr becomes about 400 V, which corresponds to an effective electric field of 2.7 MV/cm between gate and drain.

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KW - High-k passivation layer

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ER -

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

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Keywords

ASJC Scopus subject areas

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