Analysis of buffer-related lag phenomena and current collapse in GaN FETs

K. Itagaki; N. Kobayashi; K. Horio

doi:10.1002/pssc.200674715

Analysis of buffer-related lag phenomena and current collapse in GaN FETs

K. Itagaki, N. Kobayashi, K. Horio

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length L_G (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density N_DA in the buffer layer. L_G and N_DA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer L_G and the lag rate becomes high with N_DA, although it may show a saturation behaviour.

Original language	English
Pages (from-to)	2666-2669
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674715
Publication status	Published - 2007
Externally published	Yes
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200674715

Cite this

@article{f06012c84422470881f1c123bd3445f3,

title = "Analysis of buffer-related lag phenomena and current collapse in GaN FETs",

abstract = "Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.",

author = "K. Itagaki and N. Kobayashi and K. Horio",

year = "2007",

doi = "10.1002/pssc.200674715",

language = "English",

volume = "4",

pages = "2666--2669",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

}

TY - JOUR

T1 - Analysis of buffer-related lag phenomena and current collapse in GaN FETs

AU - Itagaki, K.

AU - Kobayashi, N.

AU - Horio, K.

PY - 2007

Y1 - 2007

N2 - Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.

AB - Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.

UR - http://www.scopus.com/inward/record.url?scp=49749145254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49749145254&partnerID=8YFLogxK

U2 - 10.1002/pssc.200674715

DO - 10.1002/pssc.200674715

M3 - Conference article

AN - SCOPUS:49749145254

SN - 1862-6351

VL - 4

SP - 2666

EP - 2669

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Analysis of buffer-related lag phenomena and current collapse in GaN FETs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this