Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs

H. Takayanagi; H. Nakano; K. Horio

Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs

H. Takayanagi, H. Nakano, K. Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-dimensional transient analyses of GaN MESFETs are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are included. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that so called current collapse or current reduction is more pronounced for a case with higher acceptor density in the buffer layer, because trapping effects become more significant. It is also shown that the current reduction is more pronounced when the drain voltage is lowered from a higher drain bias during turn-on.

Original language	English
Title of host publication	GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages	149-152
Number of pages	4
Publication status	Published - 2005 Dec 1
Event	GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France Duration: 2005 Oct 3 → 2005 Oct 4

Publication series

Name	GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume	2005

Conference

Conference	GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Country/Territory	France
City	Paris
Period	05/10/3 → 05/10/4

ASJC Scopus subject areas

Engineering(all)

Cite this

Takayanagi, H., Nakano, H., & Horio, K. (2005). Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (pp. 149-152). Article 1605116 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).

Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. / Takayanagi, H.; Nakano, H.; Horio, K.
GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. p. 149-152 1605116 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takayanagi, H, Nakano, H & Horio, K 2005, Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. in GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium., 1605116, GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, vol. 2005, pp. 149-152, GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Paris, France, 05/10/3.

Takayanagi H, Nakano H, Horio K. Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. p. 149-152. 1605116. (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium).

Takayanagi, H. ; Nakano, H. ; Horio, K. / Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. pp. 149-152 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium).

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AB - Two-dimensional transient analyses of GaN MESFETs are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are included. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that so called current collapse or current reduction is more pronounced for a case with higher acceptor density in the buffer layer, because trapping effects become more significant. It is also shown that the current reduction is more pronounced when the drain voltage is lowered from a higher drain bias during turn-on.

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Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs

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