Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi; Tetsuya Mizumoto; Masafumi Shimizu; Takashi Waniishi; Naoki Futakuchi; Noriaki Kaida; Yoshiaki Nakano

doi:10.1143/jjap.38.4780

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O₂ plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O₂ plasma and garnet crystals.

Original language	English
Pages (from-to)	4780-4783
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	8 B
DOIs	https://doi.org/10.1143/jjap.38.4780
Publication status	Published - 1999 Aug 15
Externally published	Yes

Keywords

Contact angle
Garnet crystals
O plasma
Semiconductor
Wafer direct bonding

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.38.4780

Cite this

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. / Yokoi, Hideki; Mizumoto, Tetsuya; Shimizu, Masafumi et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4780-4783.

Research output: Contribution to journal › Article › peer-review

@article{2f8c891be6b741339885666111963a13,

title = "Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals",

abstract = "GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.",

keywords = "Contact angle, Garnet crystals, O plasma, Semiconductor, Wafer direct bonding",

author = "Hideki Yokoi and Tetsuya Mizumoto and Masafumi Shimizu and Takashi Waniishi and Naoki Futakuchi and Noriaki Kaida and Yoshiaki Nakano",

year = "1999",

month = aug,

day = "15",

doi = "10.1143/jjap.38.4780",

language = "English",

volume = "38",

pages = "4780--4783",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 B",

}

TY - JOUR

T1 - Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Shimizu, Masafumi

AU - Waniishi, Takashi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

PY - 1999/8/15

Y1 - 1999/8/15

N2 - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

AB - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

KW - Contact angle

KW - Garnet crystals

KW - O plasma

KW - Semiconductor

KW - Wafer direct bonding

UR - http://www.scopus.com/inward/record.url?scp=0033175345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033175345&partnerID=8YFLogxK

U2 - 10.1143/jjap.38.4780

DO - 10.1143/jjap.38.4780

M3 - Article

AN - SCOPUS:0033175345

SN - 0021-4922

VL - 38

SP - 4780

EP - 4783

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8 B

ER -

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Abstract

Keywords

ASJC Scopus subject areas

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