Abstract
Two-dimensional simulation of backgating effect in a GaAs MESFET. is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 277-279 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 16 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1995 Jun |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering