Analysis of pulsed I-V curves and power slump in gaas and gan fets

Y. Kazami; D. Kasai; K. Yonemoto; K. Horio

Analysis of pulsed I-V curves and power slump in gaas and gan fets

Y. Kazami, D. Kasai, K. Yonemoto, K. Horio

Research output: Contribution to conference › Paper › peer-review

Abstract

Turn-on characteristics of GaAs MESFETs are simulated in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the turn-on characteristics, indicating that so-called power slump could occur both due to substrate traps and due to surface states. Transient simulations of GaN MESFETs are also performed in which deep levels in a semi-insulating buffer layer are considered. So-called drain lag is shown to arise as in GaAs MESFETs. It is also shown that the power slump in GaN MESFETs could occur due to deep levels in the semi-insulating buffer layer.

Original language	English
Pages	46-53
Number of pages	8
Publication status	Published - 2005 Dec 1
Event	20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 - Florianopolis, Brazil Duration: 2005 Sept 4 → 2005 Sept 7

Conference

Conference	20th Symposium on Microelectronics Technology and Devices, SBMicro 2005
Country/Territory	Brazil
City	Florianopolis
Period	05/9/4 → 05/9/7

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Analysis of pulsed I-V curves and power slump in gaas and gan fets",

abstract = "Turn-on characteristics of GaAs MESFETs are simulated in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the turn-on characteristics, indicating that so-called power slump could occur both due to substrate traps and due to surface states. Transient simulations of GaN MESFETs are also performed in which deep levels in a semi-insulating buffer layer are considered. So-called drain lag is shown to arise as in GaAs MESFETs. It is also shown that the power slump in GaN MESFETs could occur due to deep levels in the semi-insulating buffer layer.",

author = "Y. Kazami and D. Kasai and K. Yonemoto and K. Horio",

year = "2005",

month = dec,

day = "1",

language = "English",

pages = "46--53",

note = "20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 ; Conference date: 04-09-2005 Through 07-09-2005",

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TY - CONF

T1 - Analysis of pulsed I-V curves and power slump in gaas and gan fets

AU - Kazami, Y.

AU - Kasai, D.

AU - Yonemoto, K.

AU - Horio, K.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Turn-on characteristics of GaAs MESFETs are simulated in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the turn-on characteristics, indicating that so-called power slump could occur both due to substrate traps and due to surface states. Transient simulations of GaN MESFETs are also performed in which deep levels in a semi-insulating buffer layer are considered. So-called drain lag is shown to arise as in GaAs MESFETs. It is also shown that the power slump in GaN MESFETs could occur due to deep levels in the semi-insulating buffer layer.

AB - Turn-on characteristics of GaAs MESFETs are simulated in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the turn-on characteristics, indicating that so-called power slump could occur both due to substrate traps and due to surface states. Transient simulations of GaN MESFETs are also performed in which deep levels in a semi-insulating buffer layer are considered. So-called drain lag is shown to arise as in GaAs MESFETs. It is also shown that the power slump in GaN MESFETs could occur due to deep levels in the semi-insulating buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=31744450611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31744450611&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31744450611

SP - 46

EP - 53

T2 - 20th Symposium on Microelectronics Technology and Devices, SBMicro 2005

Y2 - 4 September 2005 through 7 September 2005

ER -

Analysis of pulsed I-V curves and power slump in gaas and gan fets

Abstract

Conference

ASJC Scopus subject areas

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