Abstract
This study theoretically demonstrates that the gate-lag in recessed-gate GaAs MESFETs may not be completely suppressed when the deep-acceptor-like surface state acts as a hole trap, because the thickness of surface depletion layer can change much by the applied gate voltage. Abnormal current overshoot arise due to deep traps in the substrate when the off-state gate voltage is deeply negative.
| Original language | English |
|---|---|
| Pages | 101-103 |
| Number of pages | 3 |
| Publication status | Published - 1997 Dec 1 |
| Event | Proceedings of the 1997 GaAs Reliability Workshop - Anaheim, CA, USA Duration: 1997 Oct 12 → 1997 Oct 12 |
Other
| Other | Proceedings of the 1997 GaAs Reliability Workshop |
|---|---|
| City | Anaheim, CA, USA |
| Period | 97/10/12 → 97/10/12 |
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)