TY - GEN
T1 - Analysis of surface-related kink phenomena of GaAs MESFETs
AU - Horio, K.
AU - Wakabayashi, A.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
AB - Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
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M3 - Conference contribution
AN - SCOPUS:0033345314
SN - 0780355865
T3 - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
SP - 167
EP - 170
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PB - IEEE
T2 - Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Y2 - 17 October 1999 through 20 October 1999
ER -