Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio; A. Wakabayashi; Y. Mitani

doi:10.1109/SIM.2000.939256

Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, Y. Mitani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

Original language	English
Title of host publication	IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	337-340
Number of pages	4
Volume	2000-January
ISBN (Print)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939256
Publication status	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 2000 Jul 3 → 2000 Jul 7

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	00/7/3 → 00/7/7

Keywords

Electron traps
Energy states
Gallium arsenide
Impact ionization
MESFETs
Poisson equations
Steady-state
Surface treatment
Systems engineering and theory
Voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1109/SIM.2000.939256

Cite this

Horio, K, Wakabayashi, A & Mitani, Y 2000, Analysis of trap-related kink dynamics in GaAs MESFETs. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. vol. 2000-January, 939256, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 00/7/3. https://doi.org/10.1109/SIM.2000.939256

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title = "Analysis of trap-related kink dynamics in GaAs MESFETs",

abstract = "Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.",

keywords = "Electron traps, Energy states, Gallium arsenide, Impact ionization, MESFETs, Poisson equations, Steady-state, Surface treatment, Systems engineering and theory, Voltage",

author = "Kazushige Horio and A. Wakabayashi and Y. Mitani",

year = "2000",

doi = "10.1109/SIM.2000.939256",

language = "English",

isbn = "0780358147",

volume = "2000-January",

pages = "337--340",

booktitle = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",

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note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

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T1 - Analysis of trap-related kink dynamics in GaAs MESFETs

AU - Horio, Kazushige

AU - Wakabayashi, A.

AU - Mitani, Y.

PY - 2000

Y1 - 2000

N2 - Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

AB - Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

KW - Electron traps

KW - Energy states

KW - Gallium arsenide

KW - Impact ionization

KW - MESFETs

KW - Poisson equations

KW - Steady-state

KW - Surface treatment

KW - Systems engineering and theory

KW - Voltage

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U2 - 10.1109/SIM.2000.939256

DO - 10.1109/SIM.2000.939256

M3 - Conference contribution

AN - SCOPUS:84950112905

SN - 0780358147

VL - 2000-January

SP - 337

EP - 340

BT - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

Y2 - 3 July 2000 through 7 July 2000

ER -

Analysis of trap-related kink dynamics in GaAs MESFETs

Abstract

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Keywords

ASJC Scopus subject areas

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