Angle dependent sputtering and dimer formation from vanadium nitride target by Ar+ ion bombardment

S. Kawaguchi, M. Kudo, M. Tanemura, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tillable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN Yv+ and V2 +/V+ intensity ratios was independent of that of N + and V+ intensities, VN+ and V 2+ dimer ions were generated via the "as such" direct emission process.

Original languageEnglish
Title of host publicationAICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials
PublisherTrans Tech Publications
Pages607-610
Number of pages4
ISBN (Print)0878499792, 9780878499793
Publication statusPublished - 2006
Externally publishedYes
EventAICAM 2005 - Asian International Conference on Advanced Materials - Beijing, China
Duration: 2005 Nov 32005 Nov 5

Publication series

NameAdvanced Materials Research
Volume11-12
ISSN (Print)1022-6680

Conference

ConferenceAICAM 2005 - Asian International Conference on Advanced Materials
Country/TerritoryChina
CityBeijing
Period05/11/305/11/5

Keywords

  • Angular distribution
  • Clusters
  • Secondary ion mass spectrometer
  • Sputtering
  • Vanadium nitride

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Angle dependent sputtering and dimer formation from vanadium nitride target by Ar+ ion bombardment'. Together they form a unique fingerprint.

Cite this