Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao; H. Ishikawa; T. Egawa; C. L. Shao; T. Jimbo

doi:10.1063/1.1588731

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, H. Ishikawa, T. Egawa, C. L. Shao, T. Jimbo

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

Original language	English
Pages (from-to)	4702-4704
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	26
DOIs	https://doi.org/10.1063/1.1588731
Publication status	Published - 2003 Jun 30
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1588731

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title = "Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells",

abstract = "Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.",

author = "M. Hao and H. Ishikawa and T. Egawa and Shao, {C. L.} and T. Jimbo",

year = "2003",

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T1 - Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

AU - Hao, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Shao, C. L.

AU - Jimbo, T.

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

AB - Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

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Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

Abstract

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