Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Jun 30|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)