Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack

T. Kawashima; K. S. Yew; Y. Zhou; D. S. Ang; H. Z. Zhang; K. Kyuno

doi:10.1149/08603.0055ecst

Ar-plasma-modulated optical reset in the SiO₂/Cu conductive-bridge resistive memory stack

T. Kawashima, K. S. Yew, Y. Zhou, D. S. Ang, H. Z. Zhang, K. Kyuno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Our study using conductive atomic force microscope shows that the resistive switching voltage in the SiO₂/Cu stack is reduced by 33% after Ar plasma treatment of the oxide. Besides, the negative photo-conductivity (NPC) effect, normally observed on many locations following electrical soft-breakdown, is suppressed. The NPC effect arises because the electrically-formed filamentary conductive path, comprising both Cu and oxygen vacancies, may be disrupted by the recombination of the vacancies with nearby light-excited interstitial oxygen ions. Increase of the O-H peak, as seen from FT-IR spectroscopy, indicates that surface defects generated by the Ar plasma may have adsorbed water molecules, which in turn act as counter anions (OH^-) accelerating Cu-ion diffusion into the oxide, forming a more complete Cu Filament that is non-responsive to light. The finding offers the possibility of both electrical and optical resistance control by a simple surface treatment step.

Original language	English
Title of host publication	ECS Transactions
Editors	S. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J.G. Park, G. Bersuker, H. Kubota, C. Hacker, Y.S. Obeng
Publisher	Electrochemical Society Inc.
Pages	55-64
Number of pages	10
Edition	3
ISBN (Electronic)	9781607688471
ISBN (Print)	9781510871632
DOIs	https://doi.org/10.1149/08603.0055ecst
Publication status	Published - 2018
Event	Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sept 30 → 2018 Oct 4

Publication series

Name	ECS Transactions
Number	3
Volume	86
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	18/9/30 → 18/10/4

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/08603.0055ecst

Cite this

Kawashima, T., Yew, K. S., Zhou, Y., Ang, D. S., Zhang, H. Z., & Kyuno, K. (2018). Ar-plasma-modulated optical reset in the SiO₂/Cu conductive-bridge resistive memory stack. In S. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J. G. Park, G. Bersuker, H. Kubota, C. Hacker, & Y. S. Obeng (Eds.), ECS Transactions (3 ed., pp. 55-64). (ECS Transactions; Vol. 86, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/08603.0055ecst

Ar-plasma-modulated optical reset in the SiO₂/Cu conductive-bridge resistive memory stack. / Kawashima, T.; Yew, K. S.; Zhou, Y. et al.
ECS Transactions. ed. / S. Shingubara; Z. Karim; K. Kobayashi; B. Magyari-Kope; H. Shima; Y. Saito; J.G. Park; G. Bersuker; H. Kubota; C. Hacker; Y.S. Obeng. 3. ed. Electrochemical Society Inc., 2018. p. 55-64 (ECS Transactions; Vol. 86, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawashima, T, Yew, KS, Zhou, Y, Ang, DS, Zhang, HZ & Kyuno, K 2018, Ar-plasma-modulated optical reset in the SiO₂/Cu conductive-bridge resistive memory stack. in S Shingubara, Z Karim, K Kobayashi, B Magyari-Kope, H Shima, Y Saito, JG Park, G Bersuker, H Kubota, C Hacker & YS Obeng (eds), ECS Transactions. 3 edn, ECS Transactions, no. 3, vol. 86, Electrochemical Society Inc., pp. 55-64, Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08603.0055ecst

Kawashima T, Yew KS, Zhou Y, Ang DS, Zhang HZ, Kyuno K. Ar-plasma-modulated optical reset in the SiO₂/Cu conductive-bridge resistive memory stack. In Shingubara S, Karim Z, Kobayashi K, Magyari-Kope B, Shima H, Saito Y, Park JG, Bersuker G, Kubota H, Hacker C, Obeng YS, editors, ECS Transactions. 3 ed. Electrochemical Society Inc. 2018. p. 55-64. (ECS Transactions; 3). doi: 10.1149/08603.0055ecst

Kawashima, T. ; Yew, K. S. ; Zhou, Y. et al. / Ar-plasma-modulated optical reset in the SiO₂/Cu conductive-bridge resistive memory stack. ECS Transactions. editor / S. Shingubara ; Z. Karim ; K. Kobayashi ; B. Magyari-Kope ; H. Shima ; Y. Saito ; J.G. Park ; G. Bersuker ; H. Kubota ; C. Hacker ; Y.S. Obeng. 3. ed. Electrochemical Society Inc., 2018. pp. 55-64 (ECS Transactions; 3).

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