TY - GEN
T1 - Behavior of Cu-In-Te electrodeposition from acid solution
AU - Ishizaki, Takahiro
AU - Saito, Nagahiro
AU - Yata, Daisuke
AU - Fuwa, Akio
PY - 2000/12/1
Y1 - 2000/12/1
N2 - Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.
AB - Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.
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M3 - Conference contribution
AN - SCOPUS:0034592612
SN - 087339495X
T3 - Proceedings of the Second International Conference on Processing Materials for Properties
SP - 281
EP - 284
BT - Proceedings of the Second International Conference on Processing Materials for Properties
A2 - Mishra, B.
A2 - Yamauchi, C,
A2 - Mishra, B.
A2 - Yamauchi, C.
T2 - Proceedings of the Second International Conference on Processing Materials for Properties
Y2 - 5 November 2000 through 8 November 2000
ER -