Buffer-related gate lag in AlGaN/GaN HEMTs

Atsushi Nakajima, Kunitaka Fujii, Kazushige Horio

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.

Original languageEnglish
Pages (from-to)1658-1660
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7
Publication statusPublished - 2012 Jul


  • Buffer
  • GaN
  • Gate lag
  • HEMT
  • Trap
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Condensed Matter Physics


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