Buffer-related gate lag in AlGaN/GaN HEMTs

Atsushi Nakajima; Kunitaka Fujii; Kazushige Horio

doi:10.1002/pssc.201100636

Buffer-related gate lag in AlGaN/GaN HEMTs

Atsushi Nakajima, Kunitaka Fujii, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.

Original language	English
Pages (from-to)	1658-1660
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	7
DOIs	https://doi.org/10.1002/pssc.201100636
Publication status	Published - 2012 Jul

Keywords

Buffer
GaN
Gate lag
HEMT
Trap
Two-dimensional analysis

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.201100636

Cite this

@article{c99fcab60051439faeaaf527851fe100,

title = "Buffer-related gate lag in AlGaN/GaN HEMTs",

abstract = "Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.",

keywords = "Buffer, GaN, Gate lag, HEMT, Trap, Two-dimensional analysis",

author = "Atsushi Nakajima and Kunitaka Fujii and Kazushige Horio",

year = "2012",

month = jul,

doi = "10.1002/pssc.201100636",

language = "English",

volume = "9",

pages = "1658--1660",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Buffer-related gate lag in AlGaN/GaN HEMTs

AU - Nakajima, Atsushi

AU - Fujii, Kunitaka

AU - Horio, Kazushige

PY - 2012/7

Y1 - 2012/7

N2 - Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.

AB - Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.

KW - Buffer

KW - GaN

KW - Gate lag

KW - HEMT

KW - Trap

KW - Two-dimensional analysis

UR - http://www.scopus.com/inward/record.url?scp=84864006528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864006528&partnerID=8YFLogxK

U2 - 10.1002/pssc.201100636

DO - 10.1002/pssc.201100636

M3 - Article

AN - SCOPUS:84864006528

SN - 1862-6351

VL - 9

SP - 1658

EP - 1660

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

ER -

Buffer-related gate lag in AlGaN/GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this