Abstract
Two-dimensional simulation of turn-on characteristics of Al-GaN/GaN HEMTs is performed in which both buffer traps and surface states are considered. It is studied how the so-called gate lag is affected by these factors. It is shown that gate lag due to buffer traps can occur because in the off state where the gate voltage is negative, electrons are injected into the buffer layer and captured by the traps, leading to more negatively charged buffer layer. It is also shown that gate lag due to an electron-trap-type surface state can occur only when electron's gate tunneling is considered.
| Original language | English |
|---|---|
| Pages (from-to) | 1931-1933 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 7 |
| Issue number | 7-8 |
| DOIs | |
| Publication status | Published - 2010 |
| Externally published | Yes |
| Event | 8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: 2009 Oct 18 → 2009 Oct 23 |
Keywords
- AlGaN/GaN
- Design
- HEMTs
- Simulation
- Surface states
- Trap levels
ASJC Scopus subject areas
- Condensed Matter Physics