Changes in effective work function of HfxRu1-x alloy gate electrode

T. Nabatame; Y. Nunoshige; M. Kadoshima; H. Takaba; K. Segawa; S. Kimura; H. Satake; H. Ota; T. Ohishi; A. Toriumi

doi:10.1016/j.mee.2008.02.008

Changes in effective work function of Hf_xRu_1-x alloy gate electrode

T. Nabatame, Y. Nunoshige, M. Kadoshima, H. Takaba, K. Segawa, S. Kimura, H. Satake, H. Ota, T. Ohishi, A. Toriumi

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Effective work function (φ{symbol}_m,eff) values of Hf_x Ru_1-x alloy gate electrodes on SiO₂ metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}_m,eff was determined by the crystalline structure or the composition of the Hf_xRu_1-x alloy. X-ray diffraction results indicated that the crystalline structures of Hf_xRu_1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}_m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}_m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}_m,eff of Hf_xRu_1-x alloy gates on SiO₂ MOS capacitors is dominantly determined by the Hf_xRu_1-x composition rather than the crystalline structure.

Original language	English
Pages (from-to)	1524-1528
Number of pages	5
Journal	Microelectronic Engineering
Volume	85
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2008.02.008
Publication status	Published - 2008 Jul
Externally published	Yes

Keywords

Cubic-HfRu
Effective work function
Hexagonal-Hf
Hexagonal-Ru
HfRu alloy
MOS capacitor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2008.02.008

Cite this

@article{886377fbda2b45579d312a6f7667c24f,

title = "Changes in effective work function of HfxRu1-x alloy gate electrode",

abstract = "Effective work function (φ{symbol}m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.",

keywords = "Cubic-HfRu, Effective work function, Hexagonal-Hf, Hexagonal-Ru, HfRu alloy, MOS capacitor",

author = "T. Nabatame and Y. Nunoshige and M. Kadoshima and H. Takaba and K. Segawa and S. Kimura and H. Satake and H. Ota and T. Ohishi and A. Toriumi",

note = "Funding Information: This work was supported by New Energy and Industrial Technology Development Organization (NEDO). We are grateful to the members of the Ultra Gate Stack Group of MIRAI Project for their help in sample fabrication.",

year = "2008",

month = jul,

doi = "10.1016/j.mee.2008.02.008",

language = "English",

volume = "85",

pages = "1524--1528",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "7",

}

TY - JOUR

T1 - Changes in effective work function of HfxRu1-x alloy gate electrode

AU - Nabatame, T.

AU - Nunoshige, Y.

AU - Kadoshima, M.

AU - Takaba, H.

AU - Segawa, K.

AU - Kimura, S.

AU - Satake, H.

AU - Ota, H.

AU - Ohishi, T.

AU - Toriumi, A.

N1 - Funding Information: This work was supported by New Energy and Industrial Technology Development Organization (NEDO). We are grateful to the members of the Ultra Gate Stack Group of MIRAI Project for their help in sample fabrication.

PY - 2008/7

Y1 - 2008/7

N2 - Effective work function (φ{symbol}m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.

AB - Effective work function (φ{symbol}m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.

KW - Cubic-HfRu

KW - Effective work function

KW - Hexagonal-Hf

KW - Hexagonal-Ru

KW - HfRu alloy

KW - MOS capacitor

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