| Original language | English |
|---|---|
| Pages (from-to) | L493-495 |
| Journal | Default journal |
| Volume | 41 |
| Publication status | Published - 2002 Apr 1 |
Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes
M. Nakaji, T. Egawa, H. Ishikawa, S. Arulkumaran, T. Jimbo
Research output: Contribution to journal › Article › peer-review
22
Citations
(Scopus)