| Original language | English |
|---|---|
| Pages (from-to) | C-10-2 |
| Journal | Default journal |
| Publication status | Published - 1998 Sept 1 |
Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno
Research output: Contribution to journal › Article › peer-review