Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

T. Egawa; H. Ishikawa; K. Yamamoto; T. Jimbo; M. Umeno

doi:10.1557/proc-482-1101

Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

T. Egawa, H. Ishikawa, K. Yamamoto, T. Jimbo, M. Umeno

Research output: Contribution to journal › Conference article › peer-review

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Abstract

A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.

Original language	English
Pages (from-to)	1101-1106
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-1101
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Dec 1 → 1997 Dec 4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{743b08bd0fc949cf9a012f5fe78ec066,

title = "Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD",

abstract = "A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.",

author = "T. Egawa and H. Ishikawa and K. Yamamoto and T. Jimbo and M. Umeno",

year = "1997",

doi = "10.1557/proc-482-1101",

language = "English",

volume = "482",

pages = "1101--1106",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

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TY - JOUR

T1 - Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

AU - Egawa, T.

AU - Ishikawa, H.

AU - Yamamoto, K.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1997

Y1 - 1997

N2 - A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.

AB - A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.

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U2 - 10.1557/proc-482-1101

DO - 10.1557/proc-482-1101

M3 - Conference article

AN - SCOPUS:0031345068

SN - 0272-9172

VL - 482

SP - 1101

EP - 1106

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

Abstract

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