Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Hiroyasu Ishikawa; Baijun Zhang; Kenta Asano; Takashi Egawa; Takashi Jimbo

doi:10.1016/j.jcrysgro.2004.08.054

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Hiroyasu Ishikawa, Baijun Zhang, Kenta Asano, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al_0.3Ga_0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

Original language	English
Pages (from-to)	322-326
Number of pages	5
Journal	Journal of Crystal Growth
Volume	272
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.08.054
Publication status	Published - 2004 Dec 10
Externally published	Yes

Keywords

A3. Metalorganic chemical vapor deposition
B1. Nitrides
B3. Light-emitting diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.08.054

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title = "Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si",

abstract = "We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitrides, B3. Light-emitting diodes",

author = "Hiroyasu Ishikawa and Baijun Zhang and Kenta Asano and Takashi Egawa and Takashi Jimbo",

note = "Funding Information: The authors would like to thank Dr. M.S. Hao and Dr. S. Arulkumaran for helpful discussions. This work is partially supported by Industrial Technology Research Grant Program in {\textquoteright}02 from New Energy and Industrial Technology Development Organization (NEDO) of Japan, a Special Coordination Funds for Promoting Science and Technology from The Ministry of Education, Culture, Sports, Science, and Technology.",

year = "2004",

month = dec,

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doi = "10.1016/j.jcrysgro.2004.08.054",

language = "English",

volume = "272",

pages = "322--326",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

AU - Ishikawa, Hiroyasu

AU - Zhang, Baijun

AU - Asano, Kenta

AU - Egawa, Takashi

AU - Jimbo, Takashi

N1 - Funding Information: The authors would like to thank Dr. M.S. Hao and Dr. S. Arulkumaran for helpful discussions. This work is partially supported by Industrial Technology Research Grant Program in ’02 from New Energy and Industrial Technology Development Organization (NEDO) of Japan, a Special Coordination Funds for Promoting Science and Technology from The Ministry of Education, Culture, Sports, Science, and Technology.

PY - 2004/12/10

Y1 - 2004/12/10

N2 - We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

AB - We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B3. Light-emitting diodes

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DO - 10.1016/j.jcrysgro.2004.08.054

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AN - SCOPUS:10044287457

SN - 0022-0248

VL - 272

SP - 322

EP - 326

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4 SPEC. ISS.

ER -

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Abstract

Keywords

ASJC Scopus subject areas

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