Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

M. Hattori; Y. Nishihara; Y. Ohki; M. Fujimaki; T. Souno; H. Nishikawa; T. Yamaguchi; E. Watanabe; M. Oikawa; T. Kamiya; K. Arakawa

doi:10.1016/S0168-583X(02)00537-2

Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

M. Hattori, Y. Nishihara, Y. Ohki, M. Fujimaki, T. Souno, H. Nishikawa, T. Yamaguchi, E. Watanabe, M. Oikawa, T. Kamiya, K. Arakawa

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H⁺ or He²⁺ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10^-4 was estimated.

Original language	English
Pages (from-to)	362-365
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	191
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(02)00537-2
Publication status	Published - 2002 May

Keywords

Electron spin resonance
Ion implantation
Silica glass
Vacuum ultraviolet

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(02)00537-2

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Hattori, M., Nishihara, Y., Ohki, Y., Fujimaki, M., Souno, T., Nishikawa, H., Yamaguchi, T., Watanabe, E., Oikawa, M., Kamiya, T., & Arakawa, K. (2002). Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 191(1-4), 362-365. https://doi.org/10.1016/S0168-583X(02)00537-2

Hattori, M, Nishihara, Y, Ohki, Y, Fujimaki, M, Souno, T, Nishikawa, H, Yamaguchi, T, Watanabe, E, Oikawa, M, Kamiya, T & Arakawa, K 2002, 'Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 191, no. 1-4, pp. 362-365. https://doi.org/10.1016/S0168-583X(02)00537-2

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title = "Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy",

abstract = "We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.",

keywords = "Electron spin resonance, Ion implantation, Silica glass, Vacuum ultraviolet",

author = "M. Hattori and Y. Nishihara and Y. Ohki and M. Fujimaki and T. Souno and H. Nishikawa and T. Yamaguchi and E. Watanabe and M. Oikawa and T. Kamiya and K. Arakawa",

year = "2002",

month = may,

doi = "10.1016/S0168-583X(02)00537-2",

language = "English",

volume = "191",

pages = "362--365",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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T1 - Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

AU - Hattori, M.

AU - Nishihara, Y.

AU - Ohki, Y.

AU - Fujimaki, M.

AU - Souno, T.

AU - Nishikawa, H.

AU - Yamaguchi, T.

AU - Watanabe, E.

AU - Oikawa, M.

AU - Kamiya, T.

AU - Arakawa, K.

PY - 2002/5

Y1 - 2002/5

N2 - We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.

AB - We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.

KW - Electron spin resonance

KW - Ion implantation

KW - Silica glass

KW - Vacuum ultraviolet

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U2 - 10.1016/S0168-583X(02)00537-2

DO - 10.1016/S0168-583X(02)00537-2

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SN - 0168-583X

VL - 191

SP - 362

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

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