A novel interconnect design concept named "ASIS (Appilication-specific Interconnect Structure)" is presented for 45nm CMOS performance maximization. Basic scheme of ASIS is that corresponding to applications, such as high-performance, low-power, or high reliability, interconnect structure as well as metal thickness is individually optimized in order to maximize chip-level performance matched to the application. Our investigation shows that for low-power application, the increased resistivity of scaled-down Cu-wire is not a main issue, so that thinner wire is more advantageous. For high-performance application, partially double pitch structure for local and intermediate layers is advantageous. For high-reliability requirement, Cu-Al alloy or CoWP cap-metal is quite effective for boosting reliability.
|Number of pages||8|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 2007 Apr|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering