Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using hydrogen plasma, oxygen plasma, and hexafluoroacetylacetone vapor

K.Ueno K.Ueno, V.M.Donnelly V.M.Donnelly, Kazuyoshi Ueno

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2986-2995
Journal	Journal of Vacuum Science and Technology
Volume	B16
Publication status	Published - 1998 Nov 1

Cite this

@article{0e64fbbce3e24471baa0567c2ab2ffc9,

title = "Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using hydrogen plasma, oxygen plasma, and hexafluoroacetylacetone vapor",

author = "K.Ueno K.Ueno and V.M.Donnelly V.M.Donnelly and Kazuyoshi Ueno",

year = "1998",

month = nov,

day = "1",

language = "English",

volume = "B16",

pages = "2986--2995",

journal = "Journal of Vacuum Science and Technology",

}

TY - JOUR

T1 - Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using hydrogen plasma, oxygen plasma, and hexafluoroacetylacetone vapor

AU - K.Ueno, K.Ueno

AU - V.M.Donnelly, V.M.Donnelly

AU - Ueno, Kazuyoshi

PY - 1998/11/1

Y1 - 1998/11/1

M3 - Article

VL - B16

SP - 2986

EP - 2995

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

ER -